NTGD3147F
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.0001
SINGLE PULSE
0.001
0.01
0.1
1
10
100
1000
t, TIME (s)
Figure 13. Thermal Response
TYPICAL SCHOTTKY CHARACTERISTICS
10
100
10
T J = 125 ° C
1
T J = 125 ° C
75 ° C
1
0.1
0.01
T J = 75 ° C
T J = 25 ° C
0.1
0
0.1
25 ° C ? 55 ° C
0.2 0.3 0.4 0.5 0.6 0.7 0.8
0.9
0.001
0
5
10
15
20
V F , INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 14. Typical Forward Voltage
ORDERING INFORMATION
V R , REVERSE VOLTAGE (V)
Figure 15. Typical Reverse Current
Device
NTGD3147FT1G
Package
TSOP ? 6
(Pb ? Free)
Shipping ?
3000 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
6
相关PDF资料
NTGD3148NT1G MOSFET N-CH DUAL 20V 3.5A 6TSOP
NTGD3149CT1G MOSFET COMPL 20V DUAL 6-TSOP
NTGD4161PT1G MOSFET P-CH DUAL 30V 2.3A 6-TSOP
NTGD4167CT1G MOSFET N/P-CH 30V DUAL 6-TSOP
NTGD4169FT1G MOSFET N-CH 30V 2.6A 6-TSOP
NTGS1135PT1G MOSFET P-CH 8V 4.6A 6-TSOP
NTGS3130NT1G MOSFET N-CH SGL 20V 5.6A 6-TSOP
NTGS3441BT1G MOSFET P-CH 20V 2.2A 6-TSOP
相关代理商/技术参数
NTGD3148 制造商:ON Semiconductor 功能描述:MOSFET NN CH 20V 3.5A 6TSOP 制造商:ON Semiconductor 功能描述:MOSFET, NN CH, 20V, 3.5A, 6TSOP
NTGD3148N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 3.5 A, Dual N-Channel, TSOP-6
NTGD3148NT1G 功能描述:MOSFET NFET 20V 3A 70MOHM TSOP6 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTGD3149C 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual
NTGD3149CT1G 功能描述:MOSFET COMP TSOP6 20V 3A TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTGD4161P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6
NTGD4161P_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6
NTGD4161PT1G 功能描述:MOSFET PFET TSOP6 20V 2.3A 160mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube